Environmentally stable anisotropictransition metal trichalcogenide material ZrS3 is available at2Dsemiconductors USA. ZrS3 is a layered material like MoS2 andother layered systems, except that it exhibits highly anisotropiccrystalline structure and material properties (Like ReS2 or TiS3).The presence of the crystalline anisotropy results in directiondependent properties like thermal conductivity, electronicmobility, and excitonic binding energies. In a typical order, alarge number of layered needle like sheets are contained in acapsule sealed under Argon environment. Crystals have beencharacterized by TEM, XPS, SIMS, Raman, and XRD and possess perfect1:3 stoichiometry and defect density less than 1 defects / 10,000unit cells.
Crystal size ~ 0.4-0.6 cm
Material characteristics
Thermoelectric IR semiconductor
High carrier mobility semiconductor
2D anisotropic semiconductor
2D Catalytic material
